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Master advisors
Liang,Hailian
DateofBirth:1979.10Nationality:Chinese
School：JiangnanUniversityDegree：PhD Major：Design and study ofICreliabilityMarital Status:Married
Phone：+86-13915288005Email：lhl2010@jiangnan.edu.cnAddress：Department of Electronic Engineering, JiangnanUniversity,
Wuxi 214122, China
BACKGROUND：
Occupation: An associate professor of Microelectronics at Jiangnan University, the master supervisor
Teaching Courses: Circuit Theory, Analog Electronics and Microelectronics Experiments
Research interests: The novel electrostatic discharge (ESD) protection device design for on-chip ESD protection and the TCAD simulations of 2D and 3D semiconductor devices.
EDUCATION：
09/2016-08/2017 |
the Computer Science and Electronic Engineering of the Central Florida University, |
Florida, USA, the visiting scholar |
|
09/2010-12/2014 |
Jiangnan University, School of Information Engineering, Light industry information |
technology and engineering（PhD） |
|
01/2004-05/2007 |
Jiangnan University, School of Information Engineering, Light industry technology and |
09/1997-07/2001 |
engineering（M.S.） Nanchang University, School of Science, Physics（B. S.） |
RESEARCH PROJECTS：
1.Design of ESD protection devices and investigation of snapback voltage clamping model in HV PIC, coming from “The Natural Science Foundation of Jiangsu Province (BK20150156,2015)”.
2.Design of LDMOS-SCR HV ESD protection devices and investigation of latch-up characteristics evaluation model, coming from “The Natural Science Foundation of China (61504049,2015)”.
3.Design and study of ESD protection devices for Si-basedICwith the different operationenvironment
4.Development and investigation of radiotransmitters
5.Research on electromagnetic compatibility of EPON optical fiber communication module of smart power meter
6.Study on the long-life circuit of distributed photovoltaic modulemicro-optimizer
Parts of papers：
[1]Hailian Liang, Xiaofeng Gu, Shurong Dong,Juin J. Liou.“RC-Imbedded LDMOS-SCR with High Holding Current forHigh-VoltageI/O ESD Protection” IEEE Transactions on Device and Materials Reliability, 15(4): 495-499,2015
[2]Hailian Liang,WeidongNie, Xiaofeng Gu, Shurong Dong,W.S.Laub. “An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits” Microelectronics Reliability, 54(6):1169-1172,2014
[3]Hailian Liang, Xiaofeng Gu, Shaoqing Xiao, Shurong Dong, JianWu,Lei Zhong. “A modified LDMOS device with improved ESD protection performance” IEEJ Transactions on Electrical and Electronic Engineering, 9(6): 700-702,2014
[4]HailianLiang,ShurongDong,XiaofengGu,LeiZhong,JianWu,ZongguangYu.“Investigationofthe triggervoltagewalk-ineffectinLDMOSforhigh-voltageESDprotection”JournalofSemiconductors,35(9): 094005,2014
[5]HailianLiang,ShurongDong,XiaofengGu,MingliangLi,YanHan.“ESDprotectiondesignofDDSCR structurebasedonthe0.5μmBCDprocess”JournalofZhejiangUniversity(EngineeringScience),47(11): 2046-2050,2013
[6]Hailian Liang, BingYang,Xiaofeng Gu,YichenKe, Guoping Gao. “Modeling and Analysis of HoldingVoltageinBJT-basedESD Protection Device” Research and process of SSE, 32(5): 446-450,2012
[7]Hailian Liang, Shurong Dong, Xiaofeng Gu,YanHan. “Whole Chip ESD Protection Design for 2.4 GHz LNA” Research and process of SSE, 32(6): 562-564,2012
[8]Hailian Liang, Shurong Dong, Xiaofeng Gu, MingliangLi,YanHan. “Effects of FingerWidthand Metal Routing of GGNMOS on ESD Protection” Research and process of SSE, 33(2), 194-198,2013
[9]Hailian Liang, Long Huang, Xiaofeng Gu, Huafeng Cao, Shurong Dong,Juin J. Liou. “Key factors affecting trigger voltage of SCRs for ESD protection” ICSICT2014, 10.28~31, Guilin, China,2014
Parts of Patents：
[1]HailianLiang, Xiaofeng Gu. “Portable multifunctional heating and thermal insulation kit of activity type”,
ZL201110143078.5, China
[2]Hailian Liang, Xiaofeng Gu, Long Huang, Shurong Dong, JianWu.“A ring VDMOS structure ESD protection device with high holding current”, ZL201310657917.4,China
[3]Hailian Liang, Long Huang, Xiuwen Bi, Xiaofeng Gu, Shurong Dong. “A LDMOS-SCR structure ESD self-protection device with high holding current and strong ESD robustness”, ZL201410024428.X, China [4]Hailian Liang, Xiaofeng Gu, Shurong Dong, Sheng Ding. “A vertical NPN triggered HV ESD protection device with high holding voltage”, ZL201210549225.3,China
[5]Hailian Liang, Xiaofeng Gu, Shurong Dong, Long Huang. “A bi-directional substrate-triggered HV ESD protection device”, ZL201210548959.X,China
[6]Hailian Liang, Xiaofeng Gu, Shurong Dong, Sheng Ding. “A ring structure LDMOS-SCR HV ESD protection device with double latch-up immunity”, ZL201310677835.6,China
[7]Hailian Liang, Xiaofeng Gu, Shurong Dong, JianWu,Long Huang. “A HV ESD protection device with bi-directional and triple conduction paths”, ZL201210504669.5,China
Host education technical department of jiangnan university. Address: no.1800, lihu avenue, wuxi, jiangsu, 214122
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