Dawei Yan, Ph.D

Male, 1981.12, Sandong Zaozhuang, Associate Professor

Email:daweiyan@jiangnan.edu.cn

Office: B225, School of IoT

TEL: 13770543872

Resume:

·Dr. Dawei Yan received his Phd degree in School of Electronic Science and Engineering of Nanjing University in 2011. Between 2013 and 2015, he was a postdoctoral researcher at College of Engineering and Applied Sciences of Nanjing University. Between 2017 and 2018, he was an advanced visitor scholar in Prof.Daniel M. Fleetwood groupatVanderbilt University. He joined Jiangnan University as an assistant professor of department of Electronic Engineering in 2011 and was promoted to an associate professor in 2015.

·Dr. Dawei Yan mainly focuses on the reliability study of the GaN-based electric devices and optical-electric devices, such as HEMTs and LEDs. In this field, He has published more than 20 research papers as the first author and/or the corresponding author, including the mainstreaming microelectronics SCI journals, such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, IEEE Photonic Technology Letters, Applied Physics Letters, and Journal of Applied Physics, with a total citation over 270 (by Google Scholars). He is the reviewer of many important SCI journals, such as APL, EDL, TED, PTL, JAP, CPB, Scientific Reports andACS Applied interface and materials.

·Dr. Dawei Yan has been supported by many funds, including the National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities, the Natural Science Foundation of Jiangsu Province, and also the China Postdoctoral Science Foundation.

----------------------------------------------------------------------------------------------------------------

Representative papers:

[1].LinnaZhaoDawei Yan^*,Zihui Zhang,Bin Hua,Guofeng Yang,YanrongCao,EnxiaZhang,XiaofengGu,Daniel M. Fleetwood. Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs,IEEE Electron Device Letters, 2018, 2018, 39(4):528-531.

[2].Linna Zhao, Leilei Chen, Guohao Yu,Dawei Yan^*, Guofeng Yang, Xiaofeng Gu^*, Bin Liu, Hai Lu, Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes, IEEE Photonics Technology Letters, 2017, 29(17): 1447-1450.

[3].Wenjie Mou, Linna Zhao, Leilei Chen,Dawei Yan^*, Huarong Ma, Guofeng Yang, Xiaofeng Gu, GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates, Solid-State Electronics, 2017, 133: 78-82

[4].Jian Ren, Wenjie Mou, Linna Zhao,Dawei Yan^*, Zhiguo Yu, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu^*, A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes, IEEE Transactions on Electron Devices, 2017, 64(2): 407-411

[5].Dawei Yan, Jian Ren, Guofeng Yang, Shaoqing Xiao, Xiaofeng Gu^*, Hai Lu^*, Surface Acceptor-like Trap Model for Gate Leakage Current Degradation in Lattice-matched InAlN/GaN HEMTs, IEEE Electron Device Letters, 2015, 36(12): 1281-1283.

[6].Jian Ren,Dawei Yan^*, Guofeng Yang, Fuxue Wang, Shaoqing Xiao, Xiaofeng Gu, Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes, Journal of Applied Physics, 2015, 117: 154503

[7].Dawei Yan, Jinpin Jiao, Jian Ren, Guofeng Yang, Xiaofeng Gu^*, Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes, Journal of Applied Physics, 2013, 114: 144511.

[8].Dawei Yan, Hai Lu, Dunjun Chen, Rong Zhang, Youdou Zheng, Xu Qian, Aidong Li,Distribution of deep-level traps at atomic-layer-deposited Al2O3/n-GaN interface, Solid-State Electronics, 2012,72:56-59.

[9].Dawei Yan, Hai Lu, Dongsheng Cao, Dunjun Chen, Rong Zhang, Youdou Zheng，On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors,Applied Physics Letters, 2010, 97(15): 153503.

[10].Dawei Yan, Hai Lu, Dongsheng Cao, Dunjun Chen, Rong Zhang, Youdou Zheng，Forward tunneling current in GaN-based blue light-emitting diodes. Applied Physics Letters, 2010, 96(8): 083504.